个人简历

杨仕娥，1996年6月毕业于郑州大学物理系，获理学学士学位，同年被免试推荐留校攻读硕士和博士研究生，2002年6月获凝聚态物理专业博士学位，并留校工作至今。2005年5月晋升副教授，获得硕士研究生导师资格。
代表性成果
主持完成国家自然科学基金项目1项，省厅级项目3项；参与完成国家973项目2项,国家863项目2项，国家自然科学基金项目4项，在国内外学术期刊上发表论文40余篇。

研究领域

先后从事半导体材料表面与界面电子结构的计算、金刚石薄膜制备、硅基薄膜及太阳电池制备等研究工作，目前主要从事薄膜太阳电池的制备与数值模拟工作。""

近期论文

1.Yang S E, Liu P, Ding D, Guo Q N, Chen Y S, Broadband Absorption Enhancement in µc-Si:H Thin-Film Solar Cells Based on Silver Nanoparticle Arrays, Nano, 2017, 12(3): 1750029.
2.Yang S E, Liu P, Zhang Y J, Guo Q N, Chen Y S, Size and shape effects on light scattering of Ag nanoparticles, Optik, 127 (2016) 5722-5728.
3.Liu P, Yang S E, Han J X, Ma Y X, Jia Y K, Chen Y S,Research of Ag Na Ping nosperes for Absorption Enhancement in Amorphous Silicon Thin Film Solar Cells, J. Opt, 2017, 46(3): 265-268(通讯作者).
4.Liu P, Yang S E, Ma Y X, Lu X YY, Jia Y K, Ding D, Chen Y S, Design of Ag Nanograting for Broadband Absorption Enhancement in Amorphous Silicon Thin FilmSolar Cells, Mat. Sci. Semicon. Proc. 39(2015) 760-763(通讯作者).
5.Ding D, Yang S E, Chen Y S, Gao X Y, Gu J Ｈ, Lu J X, Numerical simulation of light absorption enhancement in microcrystalline silicon solar cells with Al nanoparticle arrays，Acta Physica Sinica 64 (2015) 248801(通讯作者).
6.Jia Y K, Yang S E, Guo Q N, Chen Y S, Gao X Y, Gu J Ｈ, Lu J X, Optimal design of light trapping structures for broadband absorption enhancement in amorphous silicon solar cells, Acta Physica Sinica 62 (2013) 247801(通讯作者).
7.Guo Q N, Yang S E, Wang M X, Huo Y P, Tensile and fatigue properties of ultrathin copper films and their temperature dependence, Advanced Materials Research, 343-344 (2012) 296-302.
8.Li Y Y, Yang S E, Chen Y S, Gao X Y, Gu J Ｈ, Lu J X, The study of capacitively -coupled hydrogen plasma atvery high frequency, Acta Physica Sinica, 61 (2012) 165203(通讯作者).
9.He B H, Yang S E, Chen Y S, Lu J X, Simulation of gas phase reactions of microcrystalline silicon films fabricated by PECVD, Optoelectron. Lett., 7 (2011) 198-201(通讯作者).
10.Yang S E, Wen L W, Chen Y S, Wang C Z, Gu J Ｈ, Lu J X, Substrate temperature and B-doping effects on microstructure and electronic properties of p-type hydrogenated microcrystalline silicon films, Acta Physica Sinica 57 (2008) 5176-5181.
11.Yang S E, Yao N, Wang X P, Li H J, Ma B X, Qin G Y, Zhang B L, Effect of Mo ion-implantation on the adhension of diamond coatings, Acta Physica Sinica, 51 (2002) 347-350.
12.Yang S E, Jia Y, Ma B X, Shen S G, Fan X Q, Electronic structure of the ZnSe/GaAs(100) interfaces with atom interchange, Acta Physica Sinica (Overseas edition), 8 (1999): 694-701.