1、Junji Cheng, Xingbi Chen. A practical approach to enhance yield of OPTVLD products[J]. IEEE Electron Device Lett., Feb. 2013, 34(2): 289-291 2、Junji Cheng, Xingbi Chen. A new planar junction edge termination technique using OPTVLD with a buried layer[J]. IEEE Trans. on Electron Devices, July 2013, 60(7): 2428-2431 3、Junji Cheng, Xingbi Chen. Hot-carrier reliability in OPTVLD-LDMOS[J]. Journal of Semiconductors, 2012, 33(6): 064003 4、Junji Cheng, Xingbi Chen. Low specific on-resistance p-type OPTVLD LDMOS with double hole-conductive paths for SPIC application[C]. IEEE ISPSD, Bruges, 2012, Late News Paper, 225-228 5、Junji Cheng, Xingbi Chen. A novel low-side structure for OPTVLD-SPIC technologically compatible with BiCMOS[C]. IEEE ISPSD, Japan, 2013, 123-126 6、Ping Li; Xinjiang Lyu; Junji Cheng; Xingbi Chen. A Low On-State Voltage and Saturation Current TIGBT With Self-Biased pMOS.IEEE Electron Device Letters. Year: 2016, Volume: 37, Issue: 11, Pages: 1470 – 1472. 7、Bo Yi; Junji Cheng; Xing Bi Chen. A High-voltage “Quasi-p-LDMOS” using Electrons as Carriers in Drift Region Applied for SPIC. IEEE Transactions on Power Electronics. Year: 2017, Volume: PP, Issue: 99. Pages: 1 – 1. 8、Lixiao Liang; Xinjiang Lyu; Junji Cheng; Xing Bi Chen. Multilevel Low-Voltage Power Supplies Capable of Integrating With High-Voltage Devices. IEEE Transactions on Electron Devices. Year: 2017, Volume: 64, Issue: 8. Pages: 3269 – 3274. 9、Ping Li; Junji Cheng; Xingbi Chen. A low on-state voltage and saturation current TIGBT with integrated Zener diode.IEEE Electronics Letters. Year: 2017, Volume: PP, Issue: 99. 10、Deng,Jing; Cheng, Junji; Chen, Xingbi.An Improved SOI P-channel LDMOS with High-k Gate Dielectric and Dual Hole-Conductive Paths.IEEE Electronics device Letters, 2017 11、Deng,Jing; Huang, Mingmin; Cheng, Junji; Lyu, Xinjiang; Chen, Xingbi. A new low specific on-resistance Hk-LDMOS with N-poly diode. Superlattices and Microstructures, v 101, p 180-190, January 1, 2017
